RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Compare
Samsung M3 78T3354BZ0-CCC 256MB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Overall score
Samsung M3 78T3354BZ0-CCC 256MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
Faster reading speed, GB/s
2
13.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
46
Around -59% lower latency
Faster write speed, GB/s
11.0
1,519.2
Average value in the tests
Higher memory bandwidth, mbps
17000
3200
Around 5.31 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
29
Read speed, GB/s
2,909.8
13.8
Write speed, GB/s
1,519.2
11.0
Memory bandwidth, mbps
3200
17000
Other
Description
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
241
2690
Samsung M3 78T3354BZ0-CCC 256MB RAM comparisons
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM comparisons
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Kingston 39P5429-006.AO01 2GB
Kingston 9905700-047.A00G 16GB
Kingston 99U5403-036.A00G 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston MSI24D4S7D8MH-16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A5244BB0-CRC 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M474A1G43EB1-CRC 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMSX64GX4M4A2666C18 16GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMU16GX4M2A2400C16 8GB
Kingston 99U5474-010.A00LF 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Samsung M393B2G70BH0-CH9 16GB
Mushkin MRA4S293MMMF32G 32GB
Report a bug
×
Bug description
Source link