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Samsung M3 78T5663EH3-CF7 2GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB

Samsung M3 78T5663EH3-CF7 2GB vs InnoDisk Corporation M4C0-AGS1TCIK 16GB

Overall score
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Overall score
star star star star star
InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663EH3-CF7 2GB Reasons to consider
Samsung M3 78T5663EH3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 18.3
    Average value in the tests
  • Faster write speed, GB/s
    2,451.8 left arrow 14.9
    Average value in the tests
InnoDisk Corporation M4C0-AGS1TCIK 16GB Reasons to consider
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 65
    Around -103% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663EH3-CF7 2GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 32
  • Read speed, GB/s
    4,605.9 left arrow 18.3
  • Write speed, GB/s
    2,451.8 left arrow 14.9
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    878 left arrow 3149

Samsung M3 78T5663EH3-CF7 2GB RAM comparisons

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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