RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CF7 2GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Compare
Samsung M3 78T5663RZ3-CF7 2GB vs A-DATA Technology AO1P32NC8W1-BDZS 8GB
Overall score
Samsung M3 78T5663RZ3-CF7 2GB
Overall score
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
16.3
Average value in the tests
Faster write speed, GB/s
2,784.6
12.2
Average value in the tests
Reasons to consider
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Report a bug
Below the latency in the PassMark tests, ns
58
65
Around -12% lower latency
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
58
Read speed, GB/s
4,806.8
16.3
Write speed, GB/s
2,784.6
12.2
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
932
2591
Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CF7 2GB
A-DATA Technology AO1P32NC8W1-BDZS 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-8GSQ 8GB
G Skill Intl F5-6400J3239G16G 16GB
Inmos + 256MB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA82GR7MFR4N-UH 16GB
A-DATA Technology DQVE1908 512MB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston HX426C16FB2/8-SP 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB
Kingston 99U5428-063.A00LF 8GB
AMD R744G2400U1S 4GB
Kingston 9905403-174.A00LF 2GB
A-DATA Technology AE4S240038G17-BHYA 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMK32GX4M4B2800C14 8GB
Kingston 9905469-124.A00LF 4GB
G Skill Intl F4-2400C16-8GRSB 8GB
Report a bug
×
Bug description
Source link