RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-4GRKD 4GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3333C16-4GRKD 4GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
G Skill Intl F4-3333C16-4GRKD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Faster reading speed, GB/s
17.6
12.9
Average value in the tests
Faster write speed, GB/s
12.0
10.3
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-3333C16-4GRKD 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
33
Around -18% lower latency
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-4GRKD 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
28
Read speed, GB/s
17.6
12.9
Write speed, GB/s
12.0
10.3
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2910
2619
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
G Skill Intl F4-3333C16-4GRKD 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3333C16-4GRKD 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Panram International Corporation W4N2666PS-8G 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingston 9965516-112.A00LF 16GB
Kingston 9905713-004.A00G 4GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston KHX2400C14S4/8G 8GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Kingston HP698651-154-MCN 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Report a bug
×
Bug description
Source link