RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43BB1-CPB 16GB
Compare
Samsung M378A2K43DB1-CVF 16GB vs Samsung M378A2K43BB1-CPB 16GB
Overall score
Samsung M378A2K43DB1-CVF 16GB
Overall score
Samsung M378A2K43BB1-CPB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A2K43DB1-CVF 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
35
Around 14% lower latency
Faster reading speed, GB/s
16.4
14.9
Average value in the tests
Faster write speed, GB/s
13.1
10.2
Average value in the tests
Higher memory bandwidth, mbps
23400
17000
Around 1.38% higher bandwidth
Reasons to consider
Samsung M378A2K43BB1-CPB 16GB
Report a bug
Specifications
Complete list of technical specifications
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43BB1-CPB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
30
35
Read speed, GB/s
16.4
14.9
Write speed, GB/s
13.1
10.2
Memory bandwidth, mbps
23400
17000
Other
Description
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3310
2768
Samsung M378A2K43DB1-CVF 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A2K43BB1-CPB 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5469-045.A00LF 4GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C14-16GTZR 16GB
AMD AE34G2139U2 4GB
Corsair CMN32GX4M2Z3600C16 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2800C15-4GVR 4GB
A-DATA Technology DQVE1908 512MB
Corsair CM4X16GE2133C13K8 16GB
SK Hynix HMT325U6BFR8C-H9 2GB
Corsair CMWX8GF2933Z16W4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C16-8GSXFB 8GB
Samsung M393B2G70BH0-CK0 16GB
Gloway International (HK) STK4U2400D15082C 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA851S6AFR6N-UH 4GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KF3600C16D4/8GX 8GB
Micron Technology 18HTF12872AY-800F1 1GB
V-GEN D4R8GL24A8R 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
A-DATA Technology VDQVE1B16 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Report a bug
×
Bug description
Source link