Samsung M378A5244CB0-CTD 4GB
SK Hynix GKE800SO102408-2400 8GB

Samsung M378A5244CB0-CTD 4GB vs SK Hynix GKE800SO102408-2400 8GB

Overall score
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Overall score
star star star star star
SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 37
    Around 3% lower latency
  • Faster reading speed, GB/s
    15.8 left arrow 14
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 9.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 19200
    Around 1.11% higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378A5244CB0-CTD 4GB
SK Hynix GKE800SO102408-2400 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 37
  • Read speed, GB/s
    15.8 left arrow 14.0
  • Write speed, GB/s
    11.8 left arrow 9.3
  • Memory bandwidth, mbps
    21300 left arrow 19200
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2497 left arrow 2327
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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