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Samsung M378B1G73QH0-CK0 8GB
Avant Technology J642GU44J2320ND 16GB

Samsung M378B1G73QH0-CK0 8GB vs Avant Technology J642GU44J2320ND 16GB

Overall score
star star star star star
Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Overall score
star star star star star
Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

Differences Specifications Comments

Differences

Samsung M378B1G73QH0-CK0 8GB Reasons to consider
Samsung M378B1G73QH0-CK0 8GB
Report a bug
Avant Technology J642GU44J2320ND 16GB Reasons to consider
Avant Technology J642GU44J2320ND 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 42
    Around -35% lower latency
  • Faster reading speed, GB/s
    16.6 left arrow 13.6
    Average value in the tests
  • Faster write speed, GB/s
    14.0 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B1G73QH0-CK0 8GB
Avant Technology J642GU44J2320ND 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 31
  • Read speed, GB/s
    13.6 left arrow 16.6
  • Write speed, GB/s
    8.4 left arrow 14.0
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2292 left arrow 3415

Samsung M378B1G73QH0-CK0 8GB RAM comparisons

Corsair CMV8GX3M1A1600C11 8GB
G Skill Intl F4-3466C16-16GTZ 16GB

Avant Technology J642GU44J2320ND 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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