RAM comparison Samsung M378B5173EB0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Samsung M378B5173EB0-CK0 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Overall score

Samsung M378B5173EB0-CK0 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5173EB0-CK0 4GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Below the latency in the PassMark tests, ns

30 42

Around -40% lower latency
Faster reading speed, GB/s

14.5 13.9

Average value in the tests
Faster write speed, GB/s

9.0 8.1

Average value in the tests
Higher memory bandwidth, mbps

21300 12800

Around 1.66 higher bandwidth

Complete list of technical specifications

Samsung M378B5173EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2150 2374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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