RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5173EB0-CK0 4GB
Nanya Technology NT2GC64B88G0NF-DI 2GB
Compare
Samsung M378B5173EB0-CK0 4GB vs Nanya Technology NT2GC64B88G0NF-DI 2GB
Overall score
Samsung M378B5173EB0-CK0 4GB
Overall score
Nanya Technology NT2GC64B88G0NF-DI 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173EB0-CK0 4GB
Report a bug
Faster reading speed, GB/s
13.9
11.2
Average value in the tests
Reasons to consider
Nanya Technology NT2GC64B88G0NF-DI 2GB
Report a bug
Below the latency in the PassMark tests, ns
32
42
Around -31% lower latency
Faster write speed, GB/s
8.2
8.1
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5173EB0-CK0 4GB
Nanya Technology NT2GC64B88G0NF-DI 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
42
32
Read speed, GB/s
13.9
11.2
Write speed, GB/s
8.1
8.2
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2150
1704
Samsung M378B5173EB0-CK0 4GB RAM comparisons
Crucial Technology CT51264BA1339.M16F 4GB
Essencore Limited KD48GU880-26N160T 8GB
Nanya Technology NT2GC64B88G0NF-DI 2GB RAM comparisons
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK8GX4M1D3000C16 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C14-8GTZN 8GB
Samsung M378B5173EB0-CK0 4GB
Nanya Technology NT2GC64B88G0NF-DI 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMD16GX4M4B3600C18 4GB
Kingston ACR256X64D3S1333C9 2GB
Smart Modular SF464128CKHIWDFSEG 4GB
Corsair CMSA4GX3M1A1333C9 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMSX32GX4M2A2666C18 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3400C16-8GTZ 8GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905744-062.A00G 32GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
Report a bug
×
Bug description
Source link