RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Compare
Samsung M378B5273CH0-CH9 4GB vs GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
37
Around -32% lower latency
Faster reading speed, GB/s
19.1
13.2
Average value in the tests
Faster write speed, GB/s
17.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
28
Read speed, GB/s
13.2
19.1
Write speed, GB/s
8.4
17.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3786
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB RAM comparisons
Corsair CMD8GX3M2A2933C12 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Kingston 99U5403-036.A00G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Samsung M378B5273CH0-CH9 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
G Skill Intl F3-1333C9-4GIS 4GB
SK Hynix HMA42GR7AFR4N-UH 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung DDR3 8GB 1600MHz 8GB
Samsung M393A4K40CB2-CTD 32GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
Kingston 9905403-437.A01LF 4GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
AMD R5S38G1601U2S 8GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Corsair CMSO4GX3M1A1600C11 4GB
Corsair CMSO4GX3M1A1600C11 4GB
Report a bug
×
Bug description
Source link