RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
Kingston XN205T-MIE 16GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Kingston XN205T-MIE 16GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Kingston XN205T-MIE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Kingston XN205T-MIE 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
37
Around -19% lower latency
Faster reading speed, GB/s
16.9
13.2
Average value in the tests
Faster write speed, GB/s
15.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Kingston XN205T-MIE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
31
Read speed, GB/s
13.2
16.9
Write speed, GB/s
8.4
15.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3522
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Kingston XN205T-MIE 16GB RAM comparisons
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston XW21KG-MIE-NX 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Kllisre 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Team Group Inc. UD5-6400 16GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
AMD AE34G1601U1 4GB
Kingston XRMWRN-MIE 16GB
Kingston ACR16D3LS1KNG/4G 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Mushkin 99[2/7/4]189F 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43CBCBCRC 16GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2666C18-32GRS 32GB
A-DATA Technology VDQVE1B16 2GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
A-DATA Technology VDQVE1B16 2GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
Corsair CML8GX3M2A1600C9 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Report a bug
×
Bug description
Source link