RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273CH0-CH9 4GB
Samsung M378A2K43CB1-CTD 16GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Samsung M378A2K43CB1-CTD 16GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Samsung M378A2K43CB1-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Samsung M378A2K43CB1-CTD 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
37
Around -12% lower latency
Faster reading speed, GB/s
16.2
13.2
Average value in the tests
Faster write speed, GB/s
12.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Samsung M378A2K43CB1-CTD 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
33
Read speed, GB/s
13.2
16.2
Write speed, GB/s
8.4
12.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2143
3116
Samsung M378B5273CH0-CH9 4GB RAM comparisons
Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB
Samsung M378A2K43CB1-CTD 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
Unifosa Corporation HU564404EP0200 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
Samsung M393B2G70BH0-CK0 16GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3200C14-8GTRS 8GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2133C15-4GRK 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Kingston 99U5474-023.A00LF 4GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
Report a bug
×
Bug description
Source link