RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5273DH0-CH9 4GB
Corsair CMK16GX4M1Z3600C18 16GB
Compare
Samsung M378B5273DH0-CH9 4GB vs Corsair CMK16GX4M1Z3600C18 16GB
Overall score
Samsung M378B5273DH0-CH9 4GB
Overall score
Corsair CMK16GX4M1Z3600C18 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273DH0-CH9 4GB
Report a bug
Reasons to consider
Corsair CMK16GX4M1Z3600C18 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
41
Around -28% lower latency
Faster reading speed, GB/s
18.5
13.3
Average value in the tests
Faster write speed, GB/s
13.4
8.3
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273DH0-CH9 4GB
Corsair CMK16GX4M1Z3600C18 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
32
Read speed, GB/s
13.3
18.5
Write speed, GB/s
8.3
13.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2176
3356
Samsung M378B5273DH0-CH9 4GB RAM comparisons
G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Corsair CMK16GX4M1Z3600C18 16GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2953EZ3-CE6 1GB
Kingston HP26D4S9S1ME-4 4GB
Avant Technology F6451U64F9333G 4GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4000C14-16GTZR 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston 99U5700-010.A00G 8GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C15-8GVK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA41GR7MFR4N-TF 8GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Transcend Information JM3200HLB-8G 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M378B5673FH0-CH9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Samsung M378A5244CB0-CVF 4GB
Report a bug
×
Bug description
Source link