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Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3333C16-8GTZB 8GB

Samsung M378B5673EH1-CF8 2GB vs G Skill Intl F4-3333C16-8GTZB 8GB

Overall score
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Overall score
star star star star star
G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

Differences Specifications Comments

Differences

Samsung M378B5673EH1-CF8 2GB Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
G Skill Intl F4-3333C16-8GTZB 8GB Reasons to consider
G Skill Intl F4-3333C16-8GTZB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 28
    Around -33% lower latency
  • Faster reading speed, GB/s
    18.7 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    14.1 left arrow 7.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 8500
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3333C16-8GTZB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 21
  • Read speed, GB/s
    12.7 left arrow 18.7
  • Write speed, GB/s
    7.5 left arrow 14.1
  • Memory bandwidth, mbps
    8500 left arrow 17000
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1988 left arrow 3380

Samsung M378B5673EH1-CF8 2GB RAM comparisons

Nanya Technology M2X4G64CB8HG5N-DG 4GB
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G Skill Intl F4-3333C16-8GTZB 8GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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