RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation D4N2666PS-16G 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Panram International Corporation D4N2666PS-16G 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Panram International Corporation D4N2666PS-16G 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
Panram International Corporation D4N2666PS-16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
28
Around -8% lower latency
Faster reading speed, GB/s
17.2
12.7
Average value in the tests
Faster write speed, GB/s
15.4
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation D4N2666PS-16G 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
26
Read speed, GB/s
12.7
17.2
Write speed, GB/s
7.5
15.4
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1988
3617
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Panram International Corporation D4N2666PS-16G 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Panram International Corporation D4N2666PS-16G 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3400C16-16GVR 16GB
Kingston 9905702-010.A00G 8GB
G Skill Intl F4-2800C15-8GRK 8GB
Kingston 99U5471-030.A00LF 8GB
Kingston 9905744-062.A00G 32GB
Kingston KHX1600C10D3/8GXF 8GB
Samsung M393A2K43CB1-CRC 16GB
Essencore Limited KD48GU88C-26N1600 8GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CMK8GX4M2B3866C18 4GB
Corsair CMY8GX3M2A2666C10 4GB
Apacer Technology 78.C2GFK.AR20B 8GB
Kingston 9965516-112.A00LF 16GB
Corsair CMV16GX4M1L2400C16 16GB
Kingston 99U5471-025.A00LF 4GB
Patriot Memory (PDP Systems) PSD38G13332 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Samsung M378B5173BH0-CH9 4GB
Samsung M378A1K43CB2-CTD 8GB
Report a bug
×
Bug description
Source link