RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5244BB0-CRC 4GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Samsung M471A5244BB0-CRC 4GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Samsung M471A5244BB0-CRC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
38
Around 26% lower latency
Reasons to consider
Samsung M471A5244BB0-CRC 4GB
Report a bug
Faster reading speed, GB/s
14
12.7
Average value in the tests
Faster write speed, GB/s
10.4
7.5
Average value in the tests
Higher memory bandwidth, mbps
19200
8500
Around 2.26 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5244BB0-CRC 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
38
Read speed, GB/s
12.7
14.0
Write speed, GB/s
7.5
10.4
Memory bandwidth, mbps
8500
19200
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1066 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1988
2055
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Samsung M471A5244BB0-CRC 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Team Group Inc. TEAMGROUP-D4-3733 8GB
Samsung M395T2863QZ4-CF76 1GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
Samsung M393B1G70BH0-YK0 8GB
Samsung M471A4G43AB1-CWE 32GB
Crucial Technology CT102464BA160B.M16 8GB
SK Hynix HMA41GU6AFR8N-TF 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD5U480016G-B 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW16GX4M1Z3600C18 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-012.A00G 8GB
Samsung M393B5170FH0-CH9 4GB
Essencore Limited IMA41GU6MFR8N-CF0 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905702-020.A00G 8GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-4000C19-16GTRS 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3600C18-8GTZN 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 4133 8GB
Report a bug
×
Bug description
Source link