RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
33
Around 15% lower latency
Reasons to consider
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Report a bug
Faster reading speed, GB/s
14.7
12.7
Average value in the tests
Faster write speed, GB/s
10.2
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
33
Read speed, GB/s
12.7
14.7
Write speed, GB/s
7.5
10.2
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1988
2764
Samsung M378B5673EH1-CF8 2GB RAM comparisons
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB RAM comparisons
A-DATA Technology AD4S3200316G22-BHYD 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Kingston 99U5471-020.A00LF 4GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-4000C19-16GTRG 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT102464BD160B.M16 8GB
Kingston 9905630-030.A00G 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-32GTZR 32GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905701-017.A00G 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Report a bug
×
Bug description
Source link