RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Compare
Samsung M378B5773DH0-CH9 2GB vs Micron Technology V-GeN D4V16GL24A8R 16GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
Micron Technology V-GeN D4V16GL24A8R 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
39
68
Around 43% lower latency
Reasons to consider
Micron Technology V-GeN D4V16GL24A8R 16GB
Report a bug
Faster reading speed, GB/s
16.9
11.7
Average value in the tests
Faster write speed, GB/s
8.9
7.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
68
Read speed, GB/s
11.7
16.9
Write speed, GB/s
7.2
8.9
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1749
2007
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5702-095.A00G 8GB
A-DATA Technology AD5U48008G-B 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C18-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 9ASF51272PZ-2G1B1 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston 9905622-058.A00G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston X2YH1K-MIE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905744-024.A00G 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
V-GEN D4S8GL32A8TS 8GB
Samsung M471B1G73EB0-YK0 8GB
Mushkin MES4S213FF16G28 16GB
Report a bug
×
Bug description
Source link