RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
15.5
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Report a bug
Below the latency in the PassMark tests, ns
24
56
Around -133% lower latency
Faster write speed, GB/s
11.0
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
24
Read speed, GB/s
4,387.7
15.5
Write speed, GB/s
1,813.5
11.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
693
2445
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5428-063.A00LF 8GB
Kingston 9965684-005.A00G 8GB
Team Group Inc. Team-Value-800 2GB
Mushkin MRA4S300GJJM16G 16GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA84GL7AFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 18ASF1G72PZ-2G1B1 8GB
Kingston 9965516-430.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C16-16GVS 16GB
Elpida EBE21UE8ACUA-8G-E 2GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
Samsung M3 93T5750CZA-CE6 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Samsung 1600 CL10 Series 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-4000C18-16GTRS 16GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Report a bug
×
Bug description
Source link