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Samsung M378T5663QZ3-CF7 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB

Samsung M378T5663QZ3-CF7 2GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB

Overall score
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Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Overall score
star star star star star
Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Differences Specifications Comments

Differences

Samsung M378T5663QZ3-CF7 2GB Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 17.3
    Average value in the tests
Micron Technology 4ATF51264AZ-3G2J1 4GB Reasons to consider
Micron Technology 4ATF51264AZ-3G2J1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    34 left arrow 56
    Around -65% lower latency
  • Faster write speed, GB/s
    12.0 left arrow 1,813.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    56 left arrow 34
  • Read speed, GB/s
    4,387.7 left arrow 17.3
  • Write speed, GB/s
    1,813.5 left arrow 12.0
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    693 left arrow 2665

Samsung M378T5663QZ3-CF7 2GB RAM comparisons

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Micron Technology 4ATF51264AZ-3G2J1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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