RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Panram International Corporation W4U2666P-8G 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Panram International Corporation W4U2666P-8G 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Panram International Corporation W4U2666P-8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
17.3
Average value in the tests
Reasons to consider
Panram International Corporation W4U2666P-8G 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
56
Around -100% lower latency
Faster write speed, GB/s
14.2
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Panram International Corporation W4U2666P-8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
28
Read speed, GB/s
4,387.7
17.3
Write speed, GB/s
1,813.5
14.2
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
693
3366
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Panram International Corporation W4U2666P-8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ40UG8EFU0-GN-F 4GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Kingston 9905403-444.A00LF 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Team Group Inc. UD5-6400 16GB
Corsair CMW16GX4M2K4266C19 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905702-006.A00G 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-16GTRS 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-4266C17-16GVKB 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Samsung M471A1G43EB1-CRC 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA81GU7CJR8N-VK 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
V-GEN D4S4GL32A16TS 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Report a bug
×
Bug description
Source link