RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378T5663QZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Compare
Samsung M378T5663QZ3-CF7 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Overall score
Samsung M378T5663QZ3-CF7 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378T5663QZ3-CF7 2GB
Report a bug
Faster reading speed, GB/s
4
20.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
56
Around -211% lower latency
Faster write speed, GB/s
16.2
1,813.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378T5663QZ3-CF7 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
18
Read speed, GB/s
4,387.7
20.5
Write speed, GB/s
1,813.5
16.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
693
3564
Samsung M378T5663QZ3-CF7 2GB RAM comparisons
Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX1600C9S3L/4G 4GB
Corsair CMD16GX4M4B3200C15 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
SK Hynix HMT451S6BFR8A-PB 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Kingston 99U5471-030.A00LF 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Kingston 9905471-002.A00LF 2GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Samsung M471B1G73DB0-YK0 8GB
Corsair CMD128GX4M8B2800C14 16GB
Samsung M378B5773DH0-CH9 2GB
Hyundai Inc AR36C18S8K2HU416R 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology 78.D2GF2.4010B 16GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-2800C16-8GRR 8GB
Qimonda 64T128020EDL2.5C2 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Report a bug
×
Bug description
Source link