RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
33
Around 21% lower latency
Faster write speed, GB/s
9.0
8.8
Average value in the tests
Reasons to consider
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Report a bug
Faster reading speed, GB/s
14.3
12.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
33
Read speed, GB/s
12.8
14.3
Write speed, GB/s
9.0
8.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2086
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
AMD R534G1601U1S-UO 4GB
Kingston KHX3200C18D4/8G 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Kingston 9905403-515.A00LF 8GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471B5273CH0-CH9 4GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Peak Electronics 256X64M-67E 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Gloway International (HK) STK4U2400D15082C 8GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KHX3000C15D4/4GX 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9965640-006.A01G 32GB
Apacer Technology 78.A1GC6.9H10C 2GB
Neo Forza GKE160SO204808-3200 16GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905711-002.A00G 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK16GX4M2B3466C16 8GB
Report a bug
×
Bug description
Source link