RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2400C15-8GIS 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2400C15-8GIS 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
G Skill Intl F4-2400C15-8GIS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
33
Around 21% lower latency
Reasons to consider
G Skill Intl F4-2400C15-8GIS 8GB
Report a bug
Faster reading speed, GB/s
15.6
12.8
Average value in the tests
Faster write speed, GB/s
11.1
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2400C15-8GIS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
33
Read speed, GB/s
12.8
15.6
Write speed, GB/s
9.0
11.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2143
2823
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
G Skill Intl F4-2400C15-8GIS 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology AX4S2800316G18-B 16GB
Kingston 99U5471-012.A00LF 4GB
Transcend Information TS512MLH64V4H 4GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 9905700-012.A00G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMAA1GU6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMA81GS6AFR8N-VK 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK8GX4M2B4200C19 4GB
Kingston 9965516-112.A00LF 16GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK16GX4M1A2666C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK128GX4M8B3000C16 16GB
Apacer Technology 76.D305G.D060B 16GB
Samsung M378A1G44BB0-CWE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avant Technology J642GU42J9266N2 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M2C3200C14M 16GB
G Skill Intl F5-5600J4040C16G 16GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
Report a bug
×
Bug description
Source link