RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Compare
Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Overall score
Samsung M391B5673EH1-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M391B5673EH1-CH9 2GB
Report a bug
Faster write speed, GB/s
9.0
7.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
26
Around -4% lower latency
Faster reading speed, GB/s
14.2
12.8
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
25
Read speed, GB/s
12.8
14.2
Write speed, GB/s
9.0
7.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2143
2104
Samsung M391B5673EH1-CH9 2GB RAM comparisons
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM comparisons
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-001.A01LF 2GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
A-DATA Technology DQVE1908 512MB
Corsair CMK16GX4M2Z2400C16 8GB
Samsung M378A1K43EB2-CWE 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Kingston 9905403-437.A01LF 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Kingston 9965525-155.A00LF 8GB
Corsair CMSX8GX4M2A2666C18 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Kingston 99U5474-038.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
AMD AE34G1601U1 4GB
Kingston 9965640-035.C00G 32GB
Report a bug
×
Bug description
Source link