Samsung M391B5673FH0-CH9 2GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Overall score

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Overall score

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Differences Specifications Comments

Differences

Samsung M391B5673FH0-CH9 2GB

Reasons to consider
Samsung M391B5673FH0-CH9 2GB

Below the latency in the PassMark tests, ns

28 86

Around 67% lower latency
Faster reading speed, GB/s

13.3 12.1

Average value in the tests
Faster write speed, GB/s

8.5 5.7

Average value in the tests

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Reasons to consider
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M391B5673FH0-CH9 2GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

28 86
Read speed, GB/s

13.3 12.1
Write speed, GB/s

8.5 5.7
Memory bandwidth, mbps

10600 19200

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2213 1220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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