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Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Samsung M393A1G40DB0-CPB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Overall score
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Differences Specifications Comments

Differences

Samsung M393A1G40DB0-CPB 8GB Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
  • Faster reading speed, GB/s
    10.9 left arrow 9.1
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.9
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 49
    Around -36% lower latency

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 36
  • Read speed, GB/s
    10.9 left arrow 9.1
  • Write speed, GB/s
    8.7 left arrow 7.9
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2427 left arrow 2090

Samsung M393A1G40DB0-CPB 8GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905471-002.A00LF 2GB
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