Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Samsung M393A1G40DB0-CPB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Overall score
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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Differences

  • Below the latency in the PassMark tests, ns
    22 left arrow 49
    Around -123% lower latency
  • Faster reading speed, GB/s
    18.2 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    15.6 left arrow 8.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 17000
    Around 1.25 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 22
  • Read speed, GB/s
    10.9 left arrow 18.2
  • Write speed, GB/s
    8.7 left arrow 15.6
  • Memory bandwidth, mbps
    17000 left arrow 21300
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2427 left arrow 3515
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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