Samsung M393B1G70BH0-CK0 8GB vs Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Overall score

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Overall score

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Differences Specifications Comments

Differences

Samsung M393B1G70BH0-CK0 8GB

Reasons to consider
Samsung M393B1G70BH0-CK0 8GB

Below the latency in the PassMark tests, ns

51 90

Around 43% lower latency
Faster write speed, GB/s

8.1 7.5

Average value in the tests

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Reasons to consider
Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Faster reading speed, GB/s

14.6 9.8

Average value in the tests
Higher memory bandwidth, mbps

19200 12800

Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

51 90
Read speed, GB/s

9.8 14.6
Write speed, GB/s

8.1 7.5
Memory bandwidth, mbps

12800 19200

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2208 1546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Latest comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston ACR32D4U2S8HD-8X 8GB

Kingston ACR32D4U2S8HD-8X 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

Apacer Technology D12.2356WS.001 8GB

Apacer Technology D12.2356WS.001 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB