RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Micron Technology AFLD48EH1P 8GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Micron Technology AFLD48EH1P 8GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Micron Technology AFLD48EH1P 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Reasons to consider
Micron Technology AFLD48EH1P 8GB
Report a bug
Below the latency in the PassMark tests, ns
43
51
Around -19% lower latency
Faster reading speed, GB/s
16.1
9.8
Average value in the tests
Faster write speed, GB/s
10.7
8.1
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Micron Technology AFLD48EH1P 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
43
Read speed, GB/s
9.8
16.1
Write speed, GB/s
8.1
10.7
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2208
2928
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Micron Technology AFLD48EH1P 8GB RAM comparisons
Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-CK0 8GB
Micron Technology AFLD48EH1P 8GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9905624-051.A00G 8GB
A-DATA Technology DQKD1A08 1GB
Gloway International (HK) STK2400C15-16GB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3733C17-4GVK 4GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-2666C15-8GRKB 8GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 9905665-011.A00G 4GB
Samsung M393B5170FH0-CK0 4GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Samsung 1600 CL10 Series 8GB
Transcend Information JM2666HSE-16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 99U5713-001.A00G 4GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3600C14-16GTRG 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Report a bug
×
Bug description
Source link