RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70BH0-CK0 8GB
Samsung M471A1A43CB1-CRC 8GB
Compare
Samsung M393B1G70BH0-CK0 8GB vs Samsung M471A1A43CB1-CRC 8GB
Overall score
Samsung M393B1G70BH0-CK0 8GB
Overall score
Samsung M471A1A43CB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70BH0-CK0 8GB
Report a bug
Faster write speed, GB/s
8.1
5.4
Average value in the tests
Reasons to consider
Samsung M471A1A43CB1-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
51
Around -89% lower latency
Faster reading speed, GB/s
11.2
9.8
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70BH0-CK0 8GB
Samsung M471A1A43CB1-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
51
27
Read speed, GB/s
9.8
11.2
Write speed, GB/s
8.1
5.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2208
1774
Samsung M393B1G70BH0-CK0 8GB RAM comparisons
TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB
Samsung M471A1A43CB1-CRC 8GB RAM comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C17-8GTZKW 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
A-DATA Technology DQKD1A08 1GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
AMD R538G1601U2S-UO 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Kingston KHX318C10FR/8G 8GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Kingston KF552C40-16 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-4000C18-8GVK 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston KCRXJ6-MIE 16GB
Kingston 9905702-010.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston KVR26N19D8/16 16GB
AMD R534G1601U1S-UO 4GB
Kingston 9905625-030.A00G 8GB
Report a bug
×
Bug description
Source link