RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-4000C16-16GTZR 16GB
Compare
Samsung M393B1G70QH0-YK0 8GB vs G Skill Intl F4-4000C16-16GTZR 16GB
Overall score
Samsung M393B1G70QH0-YK0 8GB
Overall score
G Skill Intl F4-4000C16-16GTZR 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1G70QH0-YK0 8GB
Report a bug
Reasons to consider
G Skill Intl F4-4000C16-16GTZR 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
52
Around -117% lower latency
Faster reading speed, GB/s
20.3
9.8
Average value in the tests
Faster write speed, GB/s
17.8
8.0
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-4000C16-16GTZR 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
52
24
Read speed, GB/s
9.8
20.3
Write speed, GB/s
8.0
17.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2179
4122
Samsung M393B1G70QH0-YK0 8GB RAM comparisons
Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C16-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP125S64CP8-S6 2GB
Kingston XVTW4H-MIE 32GB
Crucial Technology CT102464BF160B-16F 8GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Kingston ACR16D3LS1NGG/4G 4GB
G Skill Intl F3-1600C11-8GSQ 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-4000C16-16GTZR 16GB
Samsung M3 78T3354BZ0-CCC 256MB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston KHX3200C18D4/4G 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Samsung M471A2K43DB1-CTD 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3600C17-8GTZR 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KHX3733C19D4/8GX 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-4000C17-16GTRSB 16GB
Report a bug
×
Bug description
Source link