RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Compare
Samsung M393B1K70CH0-CH9 8GB vs Chun Well Technology Holding Limited D4U0832160B 8GB
Overall score
Samsung M393B1K70CH0-CH9 8GB
Overall score
Chun Well Technology Holding Limited D4U0832160B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited D4U0832160B 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
44
Around -38% lower latency
Faster reading speed, GB/s
20.5
11.2
Average value in the tests
Faster write speed, GB/s
14.5
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
32
Read speed, GB/s
11.2
20.5
Write speed, GB/s
8.1
14.5
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2293
3379
Samsung M393B1K70CH0-CH9 8GB RAM comparisons
EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Kingston ACR16D3LS1KBG/8G 8GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Samsung 1600 CL10 Series 8GB
V-GEN D4H4GL26A8TS5 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9905734-022.A00G 16GB
Strontium EVMT8G1600U86S 8GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Samsung M471B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-2933C14-16GFX 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Report a bug
×
Bug description
Source link