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Samsung M393B1K70CH0-CH9 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB

Samsung M393B1K70CH0-CH9 8GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

Overall score
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Overall score
star star star star star
InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Differences Specifications Comments

Differences

Samsung M393B1K70CH0-CH9 8GB Reasons to consider
Samsung M393B1K70CH0-CH9 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    44 left arrow 85
    Around 48% lower latency
  • Faster write speed, GB/s
    8.1 left arrow 6.0
    Average value in the tests
InnoDisk Corporation M4S0-4GSSNCIK 4GB Reasons to consider
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Report a bug
  • Faster reading speed, GB/s
    11.3 left arrow 11.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B1K70CH0-CH9 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    44 left arrow 85
  • Read speed, GB/s
    11.2 left arrow 11.3
  • Write speed, GB/s
    8.1 left arrow 6.0
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2293 left arrow 1118

Samsung M393B1K70CH0-CH9 8GB RAM comparisons

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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