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Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB

Samsung M393B2G70BH0-CK0 16GB vs Micron Technology 16ATF4G64HZ-3G2E1 32GB

Overall score
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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Overall score
star star star star star
Micron Technology 16ATF4G64HZ-3G2E1 32GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

Differences Specifications Comments

Differences

Samsung M393B2G70BH0-CK0 16GB Reasons to consider
Samsung M393B2G70BH0-CK0 16GB
Report a bug
Micron Technology 16ATF4G64HZ-3G2E1 32GB Reasons to consider
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 54
    Around -42% lower latency
  • Faster reading speed, GB/s
    16.4 left arrow 9.2
    Average value in the tests
  • Faster write speed, GB/s
    13.7 left arrow 8.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    54 left arrow 38
  • Read speed, GB/s
    9.2 left arrow 16.4
  • Write speed, GB/s
    8.1 left arrow 13.7
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2105 left arrow 3206

Samsung M393B2G70BH0-CK0 16GB RAM comparisons

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DQVE1908 512MB
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