RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CH9 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Compare
Samsung M393B5170FH0-CH9 4GB vs Micron Technology 16ATF2G64AZ-2G3H1 16GB
Overall score
Samsung M393B5170FH0-CH9 4GB
Overall score
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CH9 4GB
Report a bug
Reasons to consider
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
49
Around -75% lower latency
Faster reading speed, GB/s
14.4
10
Average value in the tests
Faster write speed, GB/s
8.6
8.2
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CH9 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
28
Read speed, GB/s
10.0
14.4
Write speed, GB/s
8.2
8.6
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2116
2489
Samsung M393B5170FH0-CH9 4GB RAM comparisons
Samsung M471B5273DH0-CH9 4GB
Samsung M392B1K70CM0-YH9 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMW16GX4M1Z3600C18 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMA81GS6MFR8N-UH 8GB
A-DATA Technology DDR2 800G 2GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M393B5270CH0-CH9 4GB
Hewlett-Packard 48U45AA# 16GB
PUSKILL DDR3 1600 8G 8GB
A-DATA Technology DDR4 3000 2OZ 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Apacer Technology 78.CAGNT.4050B 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A2K43BB1-CPB 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston KHX2133C13D4/8GX 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Transcend Information TS1GLH64V1H 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Report a bug
×
Bug description
Source link