RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Compare
Samsung M393B5170FH0-CK0 4GB vs G Skill Intl F4-3200C14-8GTZRX 8GB
Overall score
Samsung M393B5170FH0-CK0 4GB
Overall score
G Skill Intl F4-3200C14-8GTZRX 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C14-8GTZRX 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
27
Around -23% lower latency
Faster reading speed, GB/s
20.3
11.8
Average value in the tests
Faster write speed, GB/s
17.2
7.3
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
22
Read speed, GB/s
11.8
20.3
Write speed, GB/s
7.3
17.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2057
4116
Samsung M393B5170FH0-CK0 4GB RAM comparisons
Samsung M378B1G73BH0-CH9 8GB
Mushkin 994052 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Kingston 99U5428-018.A00LF 8GB
Corsair CMW16GX4M2A2666C16 8GB
A-DATA Technology AD73I1B1672EG 2GB
Wilk Elektronik S.A. GR2400S464L17S/8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFS824A.C8FHD1 8GB
A-DATA Technology DDR4 2666 8GB
Corsair CMSO4GX4M1A2133C15 4GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMU16GX4M2C3200C16 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 99U5700-010.A00G 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3333C16-4GRKD 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-4000C19-8GTZ 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Report a bug
×
Bug description
Source link