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Samsung M393B5170FH0-CK0 4GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB

Samsung M393B5170FH0-CK0 4GB vs Micron Technology 9ASF1G72PZ-2G6D1 8GB

Overall score
star star star star star
Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Overall score
star star star star star
Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Differences Specifications Comments

Differences

Samsung M393B5170FH0-CK0 4GB Reasons to consider
Samsung M393B5170FH0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 31
    Around 13% lower latency
  • Faster reading speed, GB/s
    11.8 left arrow 11
    Average value in the tests
Micron Technology 9ASF1G72PZ-2G6D1 8GB Reasons to consider
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Report a bug
  • Faster write speed, GB/s
    8.4 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M393B5170FH0-CK0 4GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 31
  • Read speed, GB/s
    11.8 left arrow 11.0
  • Write speed, GB/s
    7.3 left arrow 8.4
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2057 left arrow 2271

Samsung M393B5170FH0-CK0 4GB RAM comparisons

Samsung M378B1G73BH0-CH9 8GB
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Micron Technology 9ASF1G72PZ-2G6D1 8GB RAM comparisons

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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