RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Compare
Samsung M393B5270CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Overall score
Samsung M393B5270CH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5270CH0-CH9 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
42
Around -50% lower latency
Faster reading speed, GB/s
14.3
10.6
Average value in the tests
Faster write speed, GB/s
11.4
9.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
28
Read speed, GB/s
10.6
14.3
Write speed, GB/s
9.0
11.4
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2423
2481
Samsung M393B5270CH0-CH9 4GB RAM comparisons
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Kingston 99U5458-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Samsung M391B5673EH1-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston HX432C15PB3/16G 16GB
Kingston 9905403-090.A01LF 4GB
Corsair CMW16GX4M2D3600C18 8GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology DDR4 2800 2OZ 4GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.CAGQE.C750B 8GB
Samsung M471B5773DH0-CH9 2GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Samsung M3 93T5750CZA-CE6 2GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Strontium EVMT8G1600U86S 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB
Corsair CML16GX3M2A1600C10 8GB
SK Hynix HMA84GR7MFR4N-UH 32GB
Crucial Technology CT51264BA1339.C16F 4GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS4G4D240FSE.8FAR 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4000C19-8GTZ 8GB
Report a bug
×
Bug description
Source link