RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Compare
Samsung M4 70T2864QZ3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Overall score
Samsung M4 70T2864QZ3-CF7 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2864QZ3-CF7 1GB
Report a bug
Faster reading speed, GB/s
4
13.8
Average value in the tests
Faster write speed, GB/s
2,201.1
10.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
74
Around -164% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
74
28
Read speed, GB/s
4,178.4
13.8
Write speed, GB/s
2,201.1
10.4
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
508
2354
Samsung M4 70T2864QZ3-CF7 1GB RAM comparisons
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB RAM comparisons
AMD R748G2133U2S 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R538G1601U2S-UO 8GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston MSI24D4S7D8MHMH6 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Kingston KVR533D2N4 512MB
Essencore Limited KD4AGU880-36A180U 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905630-063.A00G 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Corsair CMK32GX4M1A2666C16 32GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-3866C18-4GVK 4GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMW128GX4M8X3600C18 16GB
Samsung M393B1K70CH0-YH9 8GB
G Skill Intl F4-3600C14-16GVKA 16GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-5066C20-8GVK 8GB
Corsair CMD8GX3M2A2933C12 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston HP24D4U7S8MD-8 8GB
Report a bug
×
Bug description
Source link