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Samsung M4 70T2953EZ3-CE6 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
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Faster reading speed, GB/s
3
18.1
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
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Below the latency in the PassMark tests, ns
28
73
Around -161% lower latency
Faster write speed, GB/s
15.6
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
28
Read speed, GB/s
3,510.5
18.1
Write speed, GB/s
1,423.3
15.6
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
476
3693
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
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Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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