RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Compare
Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology BL16G26C16U4R.16FE 16GB
Overall score
Samsung M4 70T2953EZ3-CE6 1GB
Overall score
Crucial Technology BL16G26C16U4R.16FE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M4 70T2953EZ3-CE6 1GB
Report a bug
Faster reading speed, GB/s
3
17.1
Average value in the tests
Reasons to consider
Crucial Technology BL16G26C16U4R.16FE 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
73
Around -152% lower latency
Faster write speed, GB/s
13.0
1,423.3
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
73
29
Read speed, GB/s
3,510.5
17.1
Write speed, GB/s
1,423.3
13.0
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
476
3384
Samsung M4 70T2953EZ3-CE6 1GB RAM comparisons
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Crucial Technology BL16G26C16U4R.16FE 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-2133C15-8GNT 8GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-4400C19-8GTZKK 8GB
Micron Technology 18HTF12872AY-800F1 1GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Kingston 9965662-016.A00G 16GB
G Skill Intl F4-4800C18-8GTRG 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9965669-032.A00G 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3000C16-16GRS 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung M378A1G44AB0-CWE 8GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2A2666C16 8GB
Kingston 99U5584-001.A00LF 4GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMU32GX4M2C3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Report a bug
×
Bug description
Source link