Samsung M4 70T5663CZ3-CE6 2GB vs INTENSO 5641160 8GB

Overall score

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Overall score

INTENSO 5641160 8GB

INTENSO 5641160 8GB

Differences Specifications Comments

Differences

Samsung M4 70T5663CZ3-CE6 2GB

Reasons to consider
Samsung M4 70T5663CZ3-CE6 2GB

Faster reading speed, GB/s

3 16.1

Average value in the tests

INTENSO 5641160 8GB

Reasons to consider
INTENSO 5641160 8GB

Below the latency in the PassMark tests, ns

23 69

Around -200% lower latency
Faster write speed, GB/s

10.2 1,441.2

Average value in the tests
Higher memory bandwidth, mbps

17000 5300

Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications

Samsung M4 70T5663CZ3-CE6 2GB

INTENSO 5641160 8GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

69 23
Read speed, GB/s

3,325.1 16.1
Write speed, GB/s

1,441.2 10.2
Memory bandwidth, mbps

5300 17000

Other

Description

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

525 2613

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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