RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
Compare
Samsung M471A5143SB1-CRC 4GB vs G Skill Intl F4-4400C16-8GTZR 8GB
Overall score
Samsung M471A5143SB1-CRC 4GB
Overall score
G Skill Intl F4-4400C16-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5143SB1-CRC 4GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4400C16-8GTZR 8GB
Report a bug
Faster reading speed, GB/s
21.9
14.9
Average value in the tests
Faster write speed, GB/s
19.1
10.6
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
14.9
21.9
Write speed, GB/s
10.6
19.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2196
4044
Samsung M471A5143SB1-CRC 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C16-8GTZR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A5143SB1-CRC 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
Samsung M471B5173CB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 99U5700-032.A00G 16GB
Samsung M378B5773DH0-CH9 2GB
SK Hynix HMT325U6CFR8C-H9 2GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Apacer Technology D12.2356WS.001 8GB
AMD AE34G1601U1 4GB
Corsair CMSX64GX4M4A2666C18 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Kingston 9905403-011.A03LF 2GB
Corsair CMD64GX4M8A2666C15 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
Report a bug
×
Bug description
Source link