RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A5244CB0-CWE 4GB
Kingston 9965604-027.D00G 8GB
Compare
Samsung M471A5244CB0-CWE 4GB vs Kingston 9965604-027.D00G 8GB
Overall score
Samsung M471A5244CB0-CWE 4GB
Overall score
Kingston 9965604-027.D00G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
Faster reading speed, GB/s
15.5
10.5
Average value in the tests
Faster write speed, GB/s
12.0
8.0
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Kingston 9965604-027.D00G 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
38
Around -12% lower latency
Specifications
Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Kingston 9965604-027.D00G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
38
34
Read speed, GB/s
15.5
10.5
Write speed, GB/s
12.0
8.0
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
2262
Samsung M471A5244CB0-CWE 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965604-027.D00G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A5244CB0-CWE 4GB
Kingston 9965604-027.D00G 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CM4X4GF2666C16K4 4GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3466C16-4GVK 4GB
Corsair CML8GX3M2A1866C9 4GB
Kingston K821PJ-MID 16GB
Kingston 9905469-153.A00LF 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMK64GX4M8X4200C19 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Kingston 9905403-437.A01LF 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CM4X4GF2400C16N2 4GB
ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
SK Hynix HMT351R7EFR8C-RD 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
V-GEN D4H8GL36A8TXV 8GB
Report a bug
×
Bug description
Source link