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Samsung M471A5244CB0-CWE 4GB
Mushkin MR[A/B]4U266GHHF8G 8GB

Samsung M471A5244CB0-CWE 4GB vs Mushkin MR[A/B]4U266GHHF8G 8GB

Overall score
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Overall score
star star star star star
Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Differences Specifications Comments

Differences

Samsung M471A5244CB0-CWE 4GB Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
  • Higher memory bandwidth, mbps
    25600 left arrow 17000
    Around 1.51% higher bandwidth
Mushkin MR[A/B]4U266GHHF8G 8GB Reasons to consider
Mushkin MR[A/B]4U266GHHF8G 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 38
    Around -31% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 15.5
    Average value in the tests
  • Faster write speed, GB/s
    12.8 left arrow 12.0
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M471A5244CB0-CWE 4GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 29
  • Read speed, GB/s
    15.5 left arrow 17.4
  • Write speed, GB/s
    12.0 left arrow 12.8
  • Memory bandwidth, mbps
    25600 left arrow 17000
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2283 left arrow 3113

Samsung M471A5244CB0-CWE 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Mushkin MR[A/B]4U266GHHF8G 8GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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