RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Compare
Samsung M471B5173EB0-YK0 4GB vs G Skill Intl F4-4133C19-8GTZRF 8GB
Overall score
Samsung M471B5173EB0-YK0 4GB
Overall score
G Skill Intl F4-4133C19-8GTZRF 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173EB0-YK0 4GB
Report a bug
Reasons to consider
G Skill Intl F4-4133C19-8GTZRF 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
44
Around -38% lower latency
Faster reading speed, GB/s
15.7
13
Average value in the tests
Faster write speed, GB/s
13.8
8.2
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173EB0-YK0 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
44
32
Read speed, GB/s
13.0
15.7
Write speed, GB/s
8.2
13.8
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2069
3098
Samsung M471B5173EB0-YK0 4GB RAM comparisons
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMV8GX4M1A2666C18 8GB
AMD AE34G1601U1 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Kingston 9905403-174.A00LF 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M471B5273CH0-CH9 4GB
Panram International Corporation D4N2400PS-8G 8GB
Avant Technology F641GU67F9333G 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
A-DATA Technology DQKD1A08 1GB
Samsung M378A1G43TB1-CTD 8GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Maxsun MSD48G26Q3 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4X16GC3000C16K8 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A2G40DBD-CP1???? 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Report a bug
×
Bug description
Source link