RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CB8GS2400.C8ET 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CB8GS2400.C8ET 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Crucial Technology CB8GS2400.C8ET 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Crucial Technology CB8GS2400.C8ET 8GB
Report a bug
Below the latency in the PassMark tests, ns
33
45
Around -36% lower latency
Faster reading speed, GB/s
16.2
12.3
Average value in the tests
Faster write speed, GB/s
12.6
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CB8GS2400.C8ET 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
33
Read speed, GB/s
12.3
16.2
Write speed, GB/s
8.0
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1992
2941
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology CB8GS2400.C8ET 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CB8GS2400.C8ET 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M391A1K43BB1-CRC 8GB
AMD R538G1601U2S-UO 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3000C15-4GTZ 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CM4X8GE2666C16K8 8GB
Corsair CMD16GX3M2A1866C9 8GB
Samsung M393A1G40EB1-CPB 8GB
Kingston KF3600C16D4/16GX 16GB
Corsair CMK32GX4M2Z3600C18 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Kingston 9905403-038.A00LF 4GB
Avant Technology W641GU48J5213ND 8GB
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited KD48GS88A-26N1600 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3200C14-16GTZKO 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Report a bug
×
Bug description
Source link