RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Report a bug
Below the latency in the PassMark tests, ns
30
45
Around -50% lower latency
Faster reading speed, GB/s
15.7
12.3
Average value in the tests
Faster write speed, GB/s
10.3
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
30
Read speed, GB/s
12.3
15.7
Write speed, GB/s
8.0
10.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1992
2742
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP112U64CP8-S5 1GB
Kingston MSI24D4U7S8MB-8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Kingston 99U5428-046.A00LF 4GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Asgard VMA45UG-MEC1U2AW2 8GB
Team Group Inc. Team-Elite-1333 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston ACR24D4S7S1MB-4 4GB
Kingston 99U5428-046.A00LF 4GB
Apacer Technology 78.DAGP2.4030B 16GB
Samsung M3 78T5663RZ3-CF7 2GB
SK Hynix HMA84GL7AMR4N-UH 32GB
Corsair CMX4GX3M1A1333C9 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMR32GX4M2A2666C16 16GB
Report a bug
×
Bug description
Source link