RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD48GU880-32A160X 8GB
Compare
Samsung M471B5173QH0-YK0 4GB vs Essencore Limited KD48GU880-32A160X 8GB
Overall score
Samsung M471B5173QH0-YK0 4GB
Overall score
Essencore Limited KD48GU880-32A160X 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5173QH0-YK0 4GB
Report a bug
Reasons to consider
Essencore Limited KD48GU880-32A160X 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
45
Around -61% lower latency
Faster reading speed, GB/s
17.5
12.3
Average value in the tests
Faster write speed, GB/s
14.1
8.0
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD48GU880-32A160X 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
45
28
Read speed, GB/s
12.3
17.5
Write speed, GB/s
8.0
14.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1992
3627
Samsung M471B5173QH0-YK0 4GB RAM comparisons
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Essencore Limited KD48GU880-32A160X 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173QH0-YK0 4GB
Essencore Limited KD48GU880-32A160X 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD16GX4M2K4133C19 8GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA82GS6JJR8N-VK 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
G Skill Intl F4-4266C19-4GTZ 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905711-002.A00G 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3000C14-8GTZ 8GB
Peak Electronics 256X64M-67E 2GB
Heoriady M471A1K43CB1-CTD 8GB
Kingston 9905403-444.A00LF 4GB
Samsung M471A1K43DB1-CWE 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 72ASS4G72LZ-2G3A2 32GB
Samsung M391B5273CH0-CH9 4GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
Report a bug
×
Bug description
Source link